The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

  1. Morales, F.M.
  2. Zgheib, Ch.
  3. Molina, S.I.
  4. Araújo, D.
  5. García, R.
  6. Fernández, C.
  7. Sanz-Hervás, A.
  8. Masri, P.
  9. Weih, P.
  10. Stauden, Th.
  11. Cimalla, V.
  12. Ambacher, O.
  13. Pezoldt, J.
Actes de conférence:
Physica Status Solidi C: Conferences

ISSN: 1610-1634

Année de publication: 2004

Volumen: 1

Número: 2

Pages: 341-346

Type: Communication dans un congrès

DOI: 10.1002/PSSC.200303940 GOOGLE SCHOLAR