Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

  1. Sun, M.
  2. Blasco, R.
  3. Nwodo, J.
  4. de la Mata, M.
  5. Molina, S.I.
  6. Ajay, A.
  7. Monroy, E.
  8. Valdueza-Felip, S.
  9. Naranjo, F.B.
Revista:
Materials

ISSN: 1996-1944

Any de publicació: 2022

Volum: 15

Número: 20

Tipus: Article

DOI: 10.3390/MA15207373 GOOGLE SCHOLAR lock_openAccés obert editor
Font de les dades: Scopus