Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

  1. Sun, M.
  2. Blasco, R.
  3. Nwodo, J.
  4. de la Mata, M.
  5. Molina, S.I.
  6. Ajay, A.
  7. Monroy, E.
  8. Valdueza-Felip, S.
  9. Naranjo, F.B.
Zeitschrift:
Materials

ISSN: 1996-1944

Datum der Publikation: 2022

Ausgabe: 15

Nummer: 20

Art: Artikel

DOI: 10.3390/MA15207373 GOOGLE SCHOLAR lock_openOpen Access editor