Comparison of the Material Quality of AlxIn1−xN (x—0–0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering

  1. Sun, M.
  2. Blasco, R.
  3. Nwodo, J.
  4. de la Mata, M.
  5. Molina, S.I.
  6. Ajay, A.
  7. Monroy, E.
  8. Valdueza-Felip, S.
  9. Naranjo, F.B.
Revue:
Materials

ISSN: 1996-1944

Année de publication: 2022

Volumen: 15

Número: 20

Type: Article

DOI: 10.3390/MA15207373 GOOGLE SCHOLAR lock_openAccès ouvert editor