DANIEL
ARAUJO GAY
Catedrático de Universidad
Publications by the researcher in collaboration with DANIEL ARAUJO GAY (18)
2022
-
Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
2021
-
Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
2020
-
Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
-
Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
-
High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
-
Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
-
Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Applied Surface Science, Vol. 433, pp. 408-418
2017
-
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Applied Surface Science, Vol. 395, pp. 200-207
-
Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation
Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11
-
Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon
Applied Surface Science, Vol. 395, pp. 195-199
2015
-
Potential barrier heights at metal on oxygen-terminated diamond interfaces
Journal of Applied Physics, Vol. 118, Núm. 20
2014
-
3C-SiC seeded growth on diamond substrate by VLS transport
Materials Science Forum
-
Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17
-
Diamond as substrate for 3C-SiC growth: A TEM study
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306
-
Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
Journal of Applied Physics, Vol. 116, Núm. 8
-
Heteroepitaxial CVD growth of 3C-SiC on diamond substrate
Materials Science Forum
-
Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371
2013
-
Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers
Applied Physics Letters, Vol. 103, Núm. 4