Publicaciones en las que colabora con TERESA BEN FERNANDEZ (17)

2022

  1. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

    Applied Surface Science, Vol. 573

  2. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2016

  1. (S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

    Microscopy and Microanalysis

2014

  1. GLOBAL COORDINATION AMONG THE SUBJECTS OF A DEGREE: APPLICATION TO CHEMICAL ENGINEERING BACHELOR

    ICERI2014 Proceedings -7th International Conference of Education, Research and Innovation

2012

  1. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2009

  1. High resolution electron microscopy of GaAs capped GaSb nanostructures

    Applied Physics Letters, Vol. 94, Núm. 4

2008

  1. A method to determine the strain and nucleation sites of stacked nano-objects

    Journal of Nanoscience and Nanotechnology, Vol. 8, Núm. 7, pp. 3422-3426

  2. Experimental and simulated strain field maps in stacked quantum wires

    Microscopy and Microanalysis

2007

  1. Determination of the Strain Field in Nano-Objects from Aberration-Corrected Z-contrast Images

    Extended abstract of a paper presented at Microscopy and Microanalysis 2007 in Ft. Lauderdale, Florida, USA, August 5 – August 9, 2007

  2. Direct imaging of quantum wires nucleated at diatomic steps

    Applied Physics Letters, Vol. 91, Núm. 14

  3. Error quantification in strain mapping methods

    Microscopy and Microanalysis, Vol. 13, Núm. 5, pp. 320-328

  4. Incorporation of Sb in InAsGaAs quantum dots

    Applied Physics Letters, Vol. 91, Núm. 26

  5. The Peak Pairs algorithm for strain mapping from HRTEM images

    Ultramicroscopy, Vol. 107, Núm. 12, pp. 1186-1193

2006

  1. Determination of the strain generated in InAs/InP quantum wires: Prediction of nucleation sites

    Nanotechnology, Vol. 17, Núm. 22, pp. 5652-5658

2005

  1. Quantification of the influence of TEM operation parameters on the error of HREM image matching

    14th Conference, April 11-14, 2005, Oxford, UK

  2. Quantification of the influence of TEM operation parameters on the error of HREM image matching

    MICROSCOPY OF SEMICONDUCTING MATERIALS

  3. Strain mapping from HRTEM images

    MICROSCOPY OF SEMICONDUCTING MATERIALS