Publications (73) Publications de DANIEL FERNANDEZ DE LOS REYES

2024

  1. BN nanosheets reinforced zirconia composites: An in-depth microstructural and mechanical study

    Journal of the European Ceramic Society

  2. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

    Nanomaterials, Vol. 14, Núm. 4

  3. Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics

    ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871

  4. Sb segregation in ultrathin GaAsSb layers: A quantitative analysis of soaking/desorption stages

    Applied Surface Science, Vol. 644

  5. Synthesis and Characterization of Multilayered CrAlN/Al2O3 Tandem Coating Using HiPIMS for Solar Selective Applications at High Temperature

    ACS Applied Energy Materials, Vol. 7, Núm. 2, pp. 438-449

2023

  1. Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras

    Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797

  2. Evolución de las enseñanzas practicas post-COVID 19: estudio de uncaso en el seno de los grados de ingeniería en tecnología industrial eingeniería mecánica en la Universidad de Cádiz

    Brazilian Journal of Development, Vol. 9, Núm. 7, pp. 22973-22994

  3. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions

    Applied Surface Science, Vol. 607

  4. Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers

    Nanomaterials, Vol. 13, Núm. 5

  5. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Advances in Nanomaterials for Photovoltaic Applications (MDPI), pp. 95-110

  6. Unintentional Doping in GaAsSb/GaAsN Superlattice Solar Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

2022

  1. Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

    Scientific Reports, Vol. 12, Núm. 1

  2. Effect of the AlAs capping layer thickness on the structure of InAs/GaAs QD

    Applied Surface Science, Vol. 573

  3. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices

    Applied Surface Science, Vol. 604

  4. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

  5. Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications

    Nanomaterials, Vol. 12, Núm. 8

  6. Tailoring of AlAs/InAs/GaAs QDs Nanostructures via Capping Growth Rate

    Nanomaterials, Vol. 12, Núm. 14

2021

  1. Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

    Applied Surface Science, Vol. 537

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. CDrift: An Algorithm to Correct Linear Drift from A Single High-Resolution STEM Image

    Microscopy and Microanalysis, Vol. 26, Núm. 5, pp. 913-920