Publicaciones en las que colabora con DANIEL ARAUJO GAY (34)

2024

  1. Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics

    ACS Nano, Vol. 18, Núm. 4, pp. 2861-2871

2021

  1. Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

    Applied Surface Science, Vol. 537

  2. Diamond for electronics: Materials, processing and devices

    Materials, Vol. 14, Núm. 22

  3. Dislocation generation mechanisms in heavily boron-doped diamond epilayers

    Applied Physics Letters, Vol. 118, Núm. 5

2020

  1. Surface states of (100) o-terminated diamond: Towards other 1 × 1:O reconstruction models

    Nanomaterials, Vol. 10, Núm. 6, pp. 1-15

2018

  1. Calibration of a cohesive model for fracture in low cross-linked epoxy resins

    Polymers, Vol. 10, Núm. 12

  2. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

    Applied Surface Science, Vol. 461, pp. 221-226

  3. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

    Applied Surface Science, Vol. 433, pp. 408-418

2017

  1. Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

    Applied Surface Science, Vol. 395, pp. 200-207

  2. Impact of Thermal Treatments in Crystalline Reconstruction and Electrical Properties of Diamond Ohmic Contacts Created by Boron Ion Implantation

    Physica Status Solidi (A) Applications and Materials Science, Vol. 214, Núm. 11

2016

  1. Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates

    Physica Status Solidi (A) Applications and Materials Science, Vol. 213, Núm. 10, pp. 2570-2574

  2. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Applied Physics Letters, Vol. 108, Núm. 18

2015

  1. Potential barrier heights at metal on oxygen-terminated diamond interfaces

    Journal of Applied Physics, Vol. 118, Núm. 20

  2. Si NWs conversion to Si-SiC core-shell NWs by MBE

    Materials Science Forum

  3. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Applied Physics Letters, Vol. 105, Núm. 17

  2. Diamond as substrate for 3C-SiC growth: A TEM study

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2302-2306

  3. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371

2013

  1. Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM

    Microelectronic Engineering, Vol. 112, pp. 193-197

2012

  1. Multi-technique analysis of high quality HPHT diamond crystal

    Journal of Crystal Growth, Vol. 353, Núm. 1, pp. 115-119