Publicaciones en las que colabora con MARIA DE LA PAZ ALEGRE SALGUERO (12)

2015

  1. TEM study of defects versus growth orientations in heavily boron-doped diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473

2014

  1. Critical boron-doping levels for generation of dislocations in synthetic diamond

    Applied Physics Letters, Vol. 105, Núm. 17

  2. Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

    Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371

2011

  1. Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1366-1370

  2. Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis

    Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432

2010

  1. Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers

    Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 904-907

  2. Local boron doping quantification in homoepitaxial diamond structures

    Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 972-975

  3. TEM study of superconducting polycrystalline diamond

    AIP Conference Proceedings

2009

  1. A microstructural study of superconductive nanocrystalline diamond

    Physica Status Solidi (A) Applications and Materials Science, Vol. 206, Núm. 9, pp. 1986-1990