Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Departamento
National Institute for Materials Science
Tsukuba, JapónPublicaciones en colaboración con investigadores/as de National Institute for Materials Science (18)
2021
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Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes
Applied Surface Science, Vol. 537
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
2017
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Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality
Applied Surface Science, Vol. 395, pp. 200-207
2016
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Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices
Applied Physics Letters, Vol. 108, Núm. 18
2013
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Facet engineered Ag3PO4 for efficient water photooxidation
Energy and Environmental Science, Vol. 6, Núm. 11, pp. 3380-3386
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Potential of diamond power devices
Proceedings of the International Symposium on Power Semiconductor Devices and ICs
2010
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Fabrication and characterization of TiN nanocomposite powders fabricated by DC arc-plasma method
Journal of Alloys and Compounds, Vol. 492, Núm. 1-2, pp. 685-690
2009
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Fabrication and characterization of TiN-Ag nano-dice
Micron, Vol. 40, Núm. 3, pp. 308-312
2008
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n-Type Doping of Diamond
Physics and Applications of CVD Diamond (Wiley-VCH Verlag GmbH & Co. KGaA), pp. 237-256
2006
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Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces
Physica Status Solidi (A) Applications and Materials Science
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n-Type doping of diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 203, Núm. 13, pp. 3358-3366
2005
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Admittance spectroscopy for phosphorus-doped n -type diamond epilayer
Applied Physics Letters, Vol. 86, Núm. 23, pp. 1-3
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Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer
Diamond and Related Materials
2004
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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers
Diamond and Related Materials
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Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes
Applied Physics Letters, Vol. 84, Núm. 13, pp. 2349-2351
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Electrical properties of B-related acceptor in B-doped homoepitaxial diamond layers grown by microwave plasma CVD
Diamond and Related Materials, Vol. 13, Núm. 1, pp. 198-202
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Homoepitaxial {111}-oriented diamond pn junctions grown on B-doped Ib synthetic diamond
Physica Status Solidi (A) Applied Research