Publicaciones en colaboración con investigadores/as de Grenoble Alpes University (63)

2024

  1. Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

    Nanotechnology, Vol. 35, Núm. 41

2023

  1. Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

    Diamond and Related Materials, Vol. 134

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

  3. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

  4. Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

    Diamond and Related Materials, Vol. 121

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

  3. Spin State Tunes Oxygen Atom Transfer towards FeIVO Formation in FeII Complexes

    Chemistry - A European Journal, Vol. 27, Núm. 15, pp. 4946-4954

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

    Surfaces, Vol. 3, Núm. 1, pp. 61-71

  3. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2019

  1. Cobalt(II) Pentaaza-Macrocyclic Schiff Base Complex as Catalyst for Light-Driven Hydrogen Evolution in Water: Electrochemical Generation and Theoretical Investigation of the One-Electron Reduced Species

    Inorganic Chemistry, Vol. 58, Núm. 14, pp. 9043-9056

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  3. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. Device formation and the characterizations

    Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382

  6. Electrochemical Generation and Spectroscopic Characterization of the Key Rhodium(III) Hydride Intermediates of Rhodium Poly(bipyridyl) H2-Evolving Catalysts

    Inorganic Chemistry, Vol. 57, Núm. 17, pp. 11225-11239

  7. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10