Ciencia de los Materiales e Ingeniería Metalúrgica y Química Inorgánica
Department
Grenoble Alpes University
Saint-Martin-d’Hères, FranciaPublications in collaboration with researchers from Grenoble Alpes University (63)
2024
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Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study
Nanotechnology, Vol. 35, Núm. 41
2023
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Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET
Diamond and Related Materials, Vol. 134
2022
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High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
Applied Physics Letters, Vol. 121, Núm. 7
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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, Vol. 12, Núm. 23
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
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Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
Diamond and Related Materials, Vol. 121
2021
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
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Spin State Tunes Oxygen Atom Transfer towards FeIVO Formation in FeII Complexes
Chemistry - A European Journal, Vol. 27, Núm. 15, pp. 4946-4954
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS
Surfaces, Vol. 3, Núm. 1, pp. 61-71
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2019
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Cobalt(II) Pentaaza-Macrocyclic Schiff Base Complex as Catalyst for Light-Driven Hydrogen Evolution in Water: Electrochemical Generation and Theoretical Investigation of the One-Electron Reduced Species
Inorganic Chemistry, Vol. 58, Núm. 14, pp. 9043-9056
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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Device formation and the characterizations
Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382
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Electrochemical Generation and Spectroscopic Characterization of the Key Rhodium(III) Hydride Intermediates of Rhodium Poly(bipyridyl) H2-Evolving Catalysts
Inorganic Chemistry, Vol. 57, Núm. 17, pp. 11225-11239
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Applied Physics Letters, Vol. 112, Núm. 10