Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Instituto de investigación
Grenoble Alpes University
Saint-Martin-d’Hères, FranciaPublicaciones en colaboración con investigadores/as de Grenoble Alpes University (47)
2023
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Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET
Diamond and Related Materials, Vol. 134
2022
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High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors
Applied Physics Letters, Vol. 121, Núm. 7
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High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry
Nanomaterials, Vol. 12, Núm. 23
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Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique
Diamond and Related Materials, Vol. 126
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Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs
Diamond and Related Materials, Vol. 121
2021
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Diamond/γ-alumina band offset determination by XPS
Applied Surface Science, Vol. 535
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Selectively boron doped homoepitaxial diamond growth for power device applications
Applied Physics Letters, Vol. 118, Núm. 2
2020
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Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching
Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231
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H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS
Surfaces, Vol. 3, Núm. 1, pp. 61-71
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Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study
Applied Surface Science, Vol. 528
2018
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Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 7
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Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs
Nanomaterials, Vol. 8, Núm. 8
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Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth
Nanomaterials, Vol. 8, Núm. 10
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Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS
Applied Surface Science, Vol. 461, pp. 93-97
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Device formation and the characterizations
Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382
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High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication
Applied Physics Letters, Vol. 112, Núm. 10
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Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors
IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837
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Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering
AIP Advances, Vol. 8, Núm. 11
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Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective
Applied Surface Science, Vol. 433, pp. 408-418
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Quality improvement of AlInN/p-Si heterojunctions with AlN buffer layer deposited by RF-sputtering
Journal of Alloys and Compounds, Vol. 769, pp. 824-830