Publicaciones en colaboración con investigadores/as de Grenoble Alpes University (48)

2024

  1. Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study

    Nanotechnology, Vol. 35, Núm. 41

2023

  1. Non-volatile tuning of normally-on and off states of deep depletion ZrO2/O-terminated high voltage diamond MOSFET

    Diamond and Related Materials, Vol. 134

2022

  1. High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

    Applied Physics Letters, Vol. 121, Núm. 7

  2. High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

    Nanomaterials, Vol. 12, Núm. 23

  3. Hydrogen implantation-induced blistering in diamond: Toward diamond layer transfer by the Smart Cut™ technique

    Diamond and Related Materials, Vol. 126

  4. Transport mechanism in O-terminated diamond/ZrO2 based MOSCAPs

    Diamond and Related Materials, Vol. 121

2021

  1. Diamond/γ-alumina band offset determination by XPS

    Applied Surface Science, Vol. 535

  2. Selectively boron doped homoepitaxial diamond growth for power device applications

    Applied Physics Letters, Vol. 118, Núm. 2

2020

  1. Analysis by HR-STEM of the Strain Generation in InP after SiN x Deposition and ICP Etching

    Journal of Electronic Materials, Vol. 49, Núm. 9, pp. 5226-5231

  2. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

    Surfaces, Vol. 3, Núm. 1, pp. 61-71

  3. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

    Applied Surface Science, Vol. 528

2018

  1. Boron-doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 7

  2. Control of the alumina microstructure to reduce gate leaks in diamond MOSFETs

    Nanomaterials, Vol. 8, Núm. 8

  3. Crystalline defects induced during MPCVD lateral homoepitaxial diamond growth

    Nanomaterials, Vol. 8, Núm. 10

  4. Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

    Applied Surface Science, Vol. 461, pp. 93-97

  5. Device formation and the characterizations

    Power Electronics Device Applications of Diamond Semiconductors (Elsevier), pp. 295-382

  6. High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication

    Applied Physics Letters, Vol. 112, Núm. 10

  7. Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 5, pp. 1830-1837

  8. Influence of the AlN interlayer thickness on the photovoltaic properties of in-rich AlInN on Si heterojunctions deposited by RF sputtering

    AIP Advances, Vol. 8, Núm. 11

  9. Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

    Applied Surface Science, Vol. 433, pp. 408-418