Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

  1. Piñero, J.C.
  2. Araujo, D.
  3. Traoré, A.
  4. Chicot, G.
  5. Maréchal, A.
  6. Muret, P.
  7. Alegre, M.P.
  8. Villar, M.P.
  9. Pernot, J.
Journal:
Physica Status Solidi (A) Applications and Materials Science

ISSN: 1862-6319,  1862-6300

Year of publication: 2014

Volume: 211

Issue: 10

Pages: 2367-2371

Type: Article

DOI: 10.1002/PSSA.201431178 GOOGLE SCHOLAR
Data source: Scopus