Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

  1. Piñero, J.C.
  2. Araujo, D.
  3. Traoré, A.
  4. Chicot, G.
  5. Maréchal, A.
  6. Muret, P.
  7. Alegre, M.P.
  8. Villar, M.P.
  9. Pernot, J.
Revue:
Physica Status Solidi (A) Applications and Materials Science

ISSN: 1862-6319,  1862-6300

Année de publication: 2014

Volumen: 211

Número: 10

Pages: 2367-2371

Type: Article

DOI: 10.1002/PSSA.201431178 GOOGLE SCHOLAR
La source de données: Scopus