Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

  1. Piñero, J.C.
  2. Araujo, D.
  3. Traoré, A.
  4. Chicot, G.
  5. Maréchal, A.
  6. Muret, P.
  7. Alegre, M.P.
  8. Villar, M.P.
  9. Pernot, J.
Aldizkaria:
Physica Status Solidi (A) Applications and Materials Science

ISSN: 1862-6319,  1862-6300

Argitalpen urtea: 2014

Alea: 211

Zenbakia: 10

Orrialdeak: 2367-2371

Mota: Artikulua

DOI: 10.1002/PSSA.201431178 GOOGLE SCHOLAR
Datuen iturria: Scopus