Publicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (30)

2004

  1. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  2. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

  3. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  4. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  5. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

2001

  1. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

  2. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431

  2. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  3. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406

  4. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378

  5. New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 467-470

  6. Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

    Journal of Crystal Growth, Vol. 201, pp. 1085-1088

  7. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 413-417

  8. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452

  9. Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

    Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293

  10. The effect of Si doping on the defect structure of GaN/AIN/Si(111)

    Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364