DAVID
GONZALEZ ROBLEDO
Catedrático de Universidad
Universidad Complutense de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (20)
2018
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Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
Applied Surface Science, Vol. 442, pp. 664-672
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Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
Applied Surface Science, Vol. 444, pp. 260-266
2017
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Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
Nanotechnology, Vol. 28, Núm. 42
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Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications
Nanoscale Research Letters, Vol. 12
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The impact of alloyed capping layers on the performance of INAS/GAAS quantum dot solar cells
Advances in Energy Research (Nova Science Publishers, Inc.), pp. 83-122
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Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 159, pp. 282-289
2016
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(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications
Microscopy and Microanalysis
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General route for the decomposition of InAs quantum dots during the capping process
Nanotechnology, Vol. 27, Núm. 12
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Impact of alloyed capping layers on the performance of InAs quantum dot solar cells
Solar Energy Materials and Solar Cells, Vol. 144, pp. 128-135
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Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
Solar Energy Materials and Solar Cells, Vol. 145, pp. 154-161
2015
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Effect of annealing in the Sb and in distribution of type II GaAsSb-capped InAs quantum dots
Semiconductor Science and Technology, Vol. 30, Núm. 11
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Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
Proceedings of SPIE - The International Society for Optical Engineering
2014
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Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
Journal of Applied Physics, Vol. 116, Núm. 13
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GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics
Applied Physics Letters, Vol. 105, Núm. 4
2012
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High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
Applied Physics Letters, Vol. 101, Núm. 25
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Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
Nanoscale Research Letters, Vol. 7
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Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
Applied Physics Letters, Vol. 100, Núm. 1
2011
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Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering
Applied Surface Science, Vol. 257, Núm. 22, pp. 9306-9313
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Inhibition of in desorption in diluted nitride InAsN quantum dots
Applied Physics Letters, Vol. 98, Núm. 7
2001
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Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392