Publicaciones en las que colabora con Miguel Ángel Sánchez García (9)

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

2001

  1. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  2. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406

  3. MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

    Journal of Crystal Growth, Vol. 201, pp. 415-418

  4. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452

  5. The effect of Si doping on the defect structure of GaN/AIN/Si(111)

    Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364