Publicaciones en las que colabora con DANIEL ARAUJO GAY (13)

2005

  1. Defect morphology and strain of CVD grown 3C-SiC layers: Effect of the carbonization process

    Physica Status Solidi (A) Applications and Materials Science

2004

  1. Estudio por microscopía electrónica y espectroscopía de infra-rojos de capas de SiC obtenidas mediante carburización de obleas de Si

    Boletín de la Sociedad Española de Cerámica y Vidrio, Vol. 43, Núm. 2, pp. 363-366

  2. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  3. Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

    Materials Science Forum

  4. Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

    Microchimica Acta

  5. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

    Materials Science Forum

  2. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1227-1230

  3. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

  4. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

  5. Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

    Physica Status Solidi (A) Applied Research

2001

  1. SiC thin films obtained by Si carbonization

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 342-344

  2. Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, Núm. 3, pp. 361-370