Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Research institute
Pierre
Ruterana
Publications by the researcher in collaboration with Pierre Ruterana (16)
2014
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Direct imaging of rare-earth ion clusters in Yb:CaF2
Physical Review B - Condensed Matter and Materials Physics, Vol. 90, Núm. 12
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Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
Applied Surface Science, Vol. 307, pp. 461-467
2013
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Polarity determination of polar and semipolar (112̄2) InN and GaN layers by valence band photoemission spectroscopy
Journal of Applied Physics, Vol. 114, Núm. 17
2012
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Damage formation in GaN under medium energy range implantation of rare earth ions: A combined TEM, XRD and RBS/C investigation
Materials Research Society Symposium Proceedings
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Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells
Physica Status Solidi (A) Applications and Materials Science, Vol. 209, Núm. 1, pp. 17-20
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Mechanisms of damage formation in Eu-implanted AlN
Journal of Applied Physics, Vol. 112, Núm. 7
2011
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A mechanism for damage formation in GaN during rare earth ion implantation at medium range energy and room temperature
Journal of Applied Physics, Vol. 109, Núm. 1
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Efficient blocking of planar defects by prismatic stacking faults in semipolar (11 2- 2) -GaN layers on m-sapphire by epitaxial lateral overgrowth
Applied Physics Letters, Vol. 98, Núm. 12
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Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction
EPL, Vol. 96, Núm. 4
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Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths
Applied Physics Letters, Vol. 98, Núm. 3
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The high sensitivity of InN under rare earth ion implantation at medium range energy
Journal of Physics D: Applied Physics, Vol. 44, Núm. 29
2002
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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
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Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy
Physica Status Solidi (B) Basic Research
2001
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A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)
Applied Physics Letters, Vol. 79, Núm. 22, pp. 3588-3590
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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690