Publicaciones en las que colabora con SERGIO IGNACIO MOLINA RUBIO (18)

2004

  1. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  2. Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

    Materials Science Forum

  3. Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

    Microchimica Acta

  4. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

    Materials Science Forum

  2. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1227-1230

  3. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

  4. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

  5. Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

    Physica Status Solidi (A) Applied Research

2001

  1. SiC thin films obtained by Si carbonization

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 342-344

  2. Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, Núm. 3, pp. 361-370

1999

  1. Electron microscopy study of SiC obtained by the carbonization of Si(111)

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 305-308

  2. Transmission electron microscopy study of InGaAs/InP superlattices grown on V-shaped surface InP substrates

    Applied Surface Science, Vol. 144-145, pp. 488-491

1998

  1. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278

1995

  1. Design of InGaAs linear graded buffer structures

    Applied Physics Letters, pp. 3334

1994

  1. Step-graded buffer layer study of the strain relaxation by transmission electron microscopy

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 497-501

  2. Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm-2) and unstrained epilayers

    Applied Physics Letters, Vol. 65, Núm. 19, pp. 2460-2462

  3. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519