RAFAEL GARCIA ROJA-rekin lankidetzan egindako argitalpenak (45)

2012

  1. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

    Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354

  2. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2009

  1. Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

    Applied Physics Letters, Vol. 94, Núm. 4

2007

  1. Critical strain region evaluation of self-assembled semiconductor quantum dots

    Nanotechnology, Vol. 18, Núm. 47

2004

  1. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  2. Microchemical analysis and microstructural development of Cr-doped mullites

    Microchimica Acta

  3. Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

    Microchimica Acta

  4. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. On the application of advanced computing techniques for the determination of thickness and defocus from high resolution transmission electron microscopy images

    10th International Ceramics Congress and 3rd Forum on New Materials, Florence, Italy, July 14-18, 2002

  2. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1227-1230

  3. Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

    Physica E: Low-Dimensional Systems and Nanostructures

  4. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

  5. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

  3. Origin of inversion domains in GaN/AlN/Si(111) heterostructures grown by molecular beam epitaxy

    Physica Status Solidi (B) Basic Research

  4. Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers

    Physical Review B - Condensed Matter and Materials Physics, Vol. 65, Núm. 24, pp. 2413011-2413014

2001

  1. A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

    Applied Physics Letters, Vol. 79, Núm. 22, pp. 3588-3590

  2. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Electron microscopy study of SiC obtained by the carbonization of Si(111)

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 305-308