MARIA DE LA PAZ
ALEGRE SALGUERO
Profesora Sustituta Interina
Publications by the researcher in collaboration with MARIA DE LA PAZ ALEGRE SALGUERO (19)
2023
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Didácticas de aprendizaje: clases magistrales frente al aprendizaje basado en problemas en la Escuela Técnica Superior de Ingeniería de Algeciras
Brazilian Journal of Development, Vol. 9, Núm. 11, pp. 29772-29797
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Epitaxial Growth of Boron Carbide on 4H-SiC
Solid State Phenomena (Trans Tech Publications Ltd), pp. 3-8
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Evolución de las enseñanzas practicas post-COVID 19: estudio de uncaso en el seno de los grados de ingeniería en tecnología industrial eingeniería mecánica en la Universidad de Cádiz
Brazilian Journal of Development, Vol. 9, Núm. 7, pp. 22973-22994
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Propuesta de intervención fundamentada: “Twine” al servicio de sufragar las carencias en competencias matemáticas en alumnos de nuevo ingreso
Investigación didáctica y estudios curriculares avanzados
2021
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Dislocation generation mechanisms in heavily boron-doped diamond epilayers
Applied Physics Letters, Vol. 118, Núm. 5
2020
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Interfacial integrity enhancement of atomic layer deposited alumina on boron doped diamond by surface plasma functionalization
Surface and Coatings Technology, Vol. 397
2018
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High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM
Applied Surface Science, Vol. 461, pp. 221-226
2015
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Calidad cristalina e incorporación de boro en homoepitaxias de diamante
Calidad cristalina e incorporación de boro en homoepitaxias de diamante
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TEM study of defects versus growth orientations in heavily boron-doped diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 212, Núm. 11, pp. 2468-2473
2014
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Critical boron-doping levels for generation of dislocations in synthetic diamond
Applied Physics Letters, Vol. 105, Núm. 17
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Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
Journal of Applied Physics, Vol. 116, Núm. 8
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Metal-oxide-diamond interface investigation by TEM: Toward MOS and Schottky power device behavior
Physica Status Solidi (A) Applications and Materials Science, Vol. 211, Núm. 10, pp. 2367-2371
2013
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Boron concentration profiling by high angle annular dark field-scanning transmission electron microscopy in homoepitaxial δ-doped diamond layers
Applied Physics Letters, Vol. 103, Núm. 4
2011
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Cross sectional evaluation of boron doping and defect distribution in homoepitaxial diamond layers
Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, Núm. 4, pp. 1366-1370
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Influence of the substrate type on CVD grown homoepitaxial diamond layer quality by cross sectional TEM and CL analysis
Diamond and Related Materials, Vol. 20, Núm. 3, pp. 428-432
2010
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Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 904-907
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Local boron doping quantification in homoepitaxial diamond structures
Diamond and Related Materials, Vol. 19, Núm. 7-9, pp. 972-975
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TEM study of superconducting polycrystalline diamond
AIP Conference Proceedings
2009
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A microstructural study of superconductive nanocrystalline diamond
Physica Status Solidi (A) Applications and Materials Science, Vol. 206, Núm. 9, pp. 1986-1990