Enrique Calleja Pardo-rekin lankidetzan egindako argitalpenak (18)

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

2001

  1. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  2. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406

  3. MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects

    Journal of Crystal Growth, Vol. 201, pp. 415-418

  4. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452

  5. The effect of Si doping on the defect structure of GaN/AIN/Si(111)

    Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364

1997

  1. Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

    Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291

  2. Structural study of AlGaAs/InGaAs superlattices grown by MBE on (111)B GaAs substrates

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 106-109

1995

  1. Design of InGaAs linear graded buffer structures

    Applied Physics Letters, pp. 3334