Publikationen, an denen er mitarbeitet Enrique Calleja Pardo (27)

2019

  1. (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN

    Journal of Alloys and Compounds, Vol. 783, pp. 697-708

  2. Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

    Nanoscale, Vol. 11, Núm. 28, pp. 13632-13638

2018

  1. Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy

    Journal of Crystal Growth, Vol. 493, pp. 65-75

2015

  1. Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range

    Applied Physics Letters, Vol. 106, Núm. 7

  2. Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

    Applied Physics Letters, Vol. 106, Núm. 2

2013

  1. Spontaneous formation of InGaN nanowall network directly on Si

    Applied Physics Letters, Vol. 102, Núm. 17

  2. Uniform low-to-high in composition InGaN layers grown on Si

    Applied Physics Express, Vol. 6, Núm. 11

2003

  1. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

2002

  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings

2001

  1. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690

1999

  1. Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties

    Journal of Crystal Growth, Vol. 201, pp. 296-317

  2. Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406

  3. Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: Optoelectronic properties by electron beam induced current and cathodoluminescence

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 413-417

  4. Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

    Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452

  5. The effect of Si doping on the defect structure of GaN/AIN/Si(111)

    Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364

1998

  1. Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

    Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278

  2. Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

    Applied Surface Science, Vol. 123-124, pp. 303-307

  3. Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs

    Thin Solid Films, Vol. 317, Núm. 1-2, pp. 270-273

1997

  1. Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures

    Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291