Publications by the researcher in collaboration with Enrique Calleja Pardo (27)


  1. Spontaneous formation of InGaN nanowall network directly on Si

    Applied Physics Letters, Vol. 102, Núm. 17

  2. Uniform low-to-high in composition InGaN layers grown on Si

    Applied Physics Express, Vol. 6, Núm. 11


  1. AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE

    Materials Research Society Symposium - Proceedings


  1. Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

    Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690