FRANCISCO MIGUEL
MORALES SANCHEZ
Catedrático de Universidad
SERGIO IGNACIO
MOLINA RUBIO
Catedrático de Universidad
Publikationen, an denen er mitarbeitet SERGIO IGNACIO MOLINA RUBIO (18)
2014
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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth
Materials Express, Vol. 4, Núm. 1, pp. 41-53
2012
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Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354
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High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures
Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62
2009
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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties
Journal of Crystal Growth, Vol. 311, Núm. 7, pp. 2099-2101
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Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing
Applied Physics Letters, Vol. 94, Núm. 4
2004
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Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)
Microchimica Acta
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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
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Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy
Materials Science Forum
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Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition
Microchimica Acta
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences
2003
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Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC
Materials Science Forum
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N + BF2 and N + C + BF2 high-dose co-implantation in silicon
Applied Physics A: Materials Science and Processing, Vol. 76, Núm. 5, pp. 791-800
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SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers
Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1227-1230
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
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Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si
Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30
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Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
Physica Status Solidi (A) Applied Research
2001
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SiC thin films obtained by Si carbonization
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 342-344
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Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, Núm. 3, pp. 361-370