SERGIO IGNACIO MOLINA RUBIO-rekin lankidetzan egindako argitalpenak (18)

2014

  1. Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

    Materials Express, Vol. 4, Núm. 1, pp. 41-53

2012

  1. Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN

    Scripta Materialia, Vol. 66, Núm. 6, pp. 351-354

  2. High-Resolution Electron Microscopy of Semiconductor Heterostructures and Nanostructures

    Springer Series in Materials Science (Springer Science and Business Media Deutschland GmbH), pp. 23-62

2009

  1. A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

    Journal of Crystal Growth, Vol. 311, Núm. 7, pp. 2099-2101

  2. Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing

    Applied Physics Letters, Vol. 94, Núm. 4

2004

  1. Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

    Microchimica Acta

  2. Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)

    Materials Science Forum

  3. Interfacial strain and defects in Si (001) carbonisation layers for 3C-SiC hetero-epitaxy

    Materials Science Forum

  4. Structural study of micro and nanotubes synthesized by rapid thermal chemical vapor deposition

    Microchimica Acta

  5. The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon

    Physica Status Solidi C: Conferences

2003

  1. Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC

    Materials Science Forum

  2. N + BF2 and N + C + BF2 high-dose co-implantation in silicon

    Applied Physics A: Materials Science and Processing, Vol. 76, Núm. 5, pp. 791-800

  3. SiC voids, mosaic microstructure and dislocations distribution in Si carbonized layers

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1227-1230

  4. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

  5. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

  6. Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers

    Physica Status Solidi (A) Applied Research

2001

  1. SiC thin films obtained by Si carbonization

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 342-344

  2. Structural characterization of high-dose C++N+ ion-implanted (1 1 1) Si

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 184, Núm. 3, pp. 361-370