Instituto de Microscopía Electrónica y Materiales (IMEYMAT)
Institut d'investigació
Arturo
Ponce Pedraza
Publicacions en què col·labora amb Arturo Ponce Pedraza (24)
2014
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Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging
Ultramicroscopy, Vol. 146, pp. 33-38
2013
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Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
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Towards high efficiency multi-junction solar cells grown on InP Substrates
Conference Record of the IEEE Photovoltaic Specialists Conference
2007
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Excitons in coupled InAsInP self-assembled quantum wires
Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12
2004
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Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers
Design and Nature
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Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)
Microchimica Acta
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Emission wavelength engineering of InAs/InP(001) quantum wires
European Physical Journal B, Vol. 40, Núm. 4, pp. 433-437
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Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements
SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY
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Size control of InAs/InP(001) quantum wires by tailoring P/As exchange
Applied Physics Letters, Vol. 85, Núm. 8, pp. 1424-1426
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Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields
Applied Physics Letters, Vol. 84, Núm. 23, pp. 4723-4725
2003
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Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003
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HRTEM study of AlxGa1-xN/AlN DBR mirrors
Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1178-1181
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N + BF2 and N + C + BF2 high-dose co-implantation in silicon
Applied Physics A: Materials Science and Processing, Vol. 76, Núm. 5, pp. 791-800
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Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003
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Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements
Materials Research Society Symposium - Proceedings
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Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires
Physica E: Low-Dimensional Systems and Nanostructures
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
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Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si
Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30
2002
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Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy
GAN AND RELATED ALLOYS-2001
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Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy
Materials Research Society Symposium - Proceedings, Vol. 693, pp. 177-182