Materiales y Nanotecnología para la Innovación
TEP946
Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (25)
2017
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Solution-based synthesis and processing of Sn- and Bi-doped Cu3SbSe4 nanocrystals, nanomaterials and ring-shaped thermoelectric generators
Journal of Materials Chemistry A, Vol. 5, Núm. 6, pp. 2592-2602
2012
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InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
2008
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STRESS COMPENSATION BY GaP MONOLAYERS FOR STACKED InAs/GaAs QUANTUM DOTS SOLAR CELLS
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4
2004
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Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
Materials Science Forum
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on silicon
Physica Status Solidi C: Conferences
2003
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Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates
Materials Science Forum
2002
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AlN buffer layer thickness influence on inversion domains in GaN/AlN/Si(1 1 1)
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Correlation between the AlN buffer layer thickness and the GaN polarity in GaN/AlN/Si(111) grown by MBE
Materials Research Society Symposium - Proceedings
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Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
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The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
2001
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Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy
Applied Physics Letters, Vol. 78, Núm. 18, pp. 2688-2690
1999
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Growth of III-nitrides on Si(1 1 1) by molecular beam epitaxy. Doping, optical, and electrical properties
Journal of Crystal Growth, Vol. 201, pp. 296-317
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Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 401-406
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MBE growth of GaN and AlGaN layers on Si(1 1 1) substrates: Doping effects
Journal of Crystal Growth, Vol. 201, pp. 415-418
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Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE
Physica Status Solidi (A) Applied Research, Vol. 176, Núm. 1, pp. 447-452
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Structural characterisation of AlGaN/AlN/Si(111) heterostructures by transmission electron microscopy
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS
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The effect of Si doping on the defect structure of GaN/AIN/Si(111)
Applied Physics Letters, Vol. 74, Núm. 22, pp. 3362-3364
1998
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Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs
Materials Science and Technology, Vol. 14, Núm. 12, pp. 1273-1278
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Relaxation mechanism of InGaAs single and graded layers grown on (111)B GaAs
Thin Solid Films, Vol. 317, Núm. 1-2, pp. 270-273
1997
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Influence of the surface morphology on the relaxation of low-strained InxGa1 - xAs linear buffer structures
Journal of Crystal Growth, Vol. 182, Núm. 3-4, pp. 281-291