Publicaciones en las que colabora con Arturo Ponce Pedraza (24)

2014

  1. Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging

    Ultramicroscopy, Vol. 146, pp. 33-38

2013

  1. Towards High Efficiency Multi-Junction Solar Cells Grown on InP Substrates

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)

  2. Towards high efficiency multi-junction solar cells grown on InP Substrates

    Conference Record of the IEEE Photovoltaic Specialists Conference

2007

  1. Excitons in coupled InAsInP self-assembled quantum wires

    Physical Review B - Condensed Matter and Materials Physics, Vol. 75, Núm. 12

2004

  1. Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers

    Design and Nature

  2. Crystalline inclusions formed in C + N + BF2 coimplanted on silicon (111)

    Microchimica Acta

  3. Emission wavelength engineering of InAs/InP(001) quantum wires

    European Physical Journal B, Vol. 40, Núm. 4, pp. 433-437

  4. Size and critical thickness evolution during growth of stacked layers of InAS/InP(001) quantum wires studied by in situ stress measurements

    SELF-ORGANIZED PROCESSES IN SEMICONDUCTOR HETEROEPITAXY

  5. Size control of InAs/InP(001) quantum wires by tailoring P/As exchange

    Applied Physics Letters, Vol. 85, Núm. 8, pp. 1424-1426

  6. Stacking of InAs/InP (001) quantum wires studied by in situ stress measurements: Role of inhomogeneous stress fields

    Applied Physics Letters, Vol. 84, Núm. 23, pp. 4723-4725

2003

  1. Comparison of the thickness determined by Fresnel contrast and Rutherford backscattering spectrometry in ultra-thin layers

    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003

  2. HRTEM study of AlxGa1-xN/AlN DBR mirrors

    Diamond and Related Materials, Vol. 12, Núm. 3-7, pp. 1178-1181

  3. N + BF2 and N + C + BF2 high-dose co-implantation in silicon

    Applied Physics A: Materials Science and Processing, Vol. 76, Núm. 5, pp. 791-800

  4. Neural networks applied to the determination of thickness and defocus from high resolution transmission electron microscopy images

    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003

  5. Size and critical thickness evolution during growth of stacked layers of InAs/InP(001) quantum wires studied by in situ stress measurements

    Materials Research Society Symposium - Proceedings

  6. Size self-filtering effect in vertical stacks of InAs/InP self-assembled quantum wires

    Physica E: Low-Dimensional Systems and Nanostructures

  7. Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates

    Materials Science Forum

  8. Transmission electron microscopy study of simultaneous high-dose C+ + N+ co-implantation into (1 1 1)Si

    Thin Solid Films, Vol. 426, Núm. 1-2, pp. 16-30

2002

  1. Effect of high temperature single and multiple AIN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

    GAN AND RELATED ALLOYS-2001

  2. Effect of high temperature single and multiple AlN intermediate layers on N-polar and Ga-polar GaN grown by molecular beam epitaxy

    Materials Research Society Symposium - Proceedings, Vol. 693, pp. 177-182